IR公司的IRS2336xD是高壓高速功率MOSFET和IGBT柵極驅(qū)動(dòng)器,具有三個(gè)高邊和低邊參考輸出通路,能驅(qū)動(dòng)多達(dá)6個(gè)IGBT/MOSFET功率器件,每路的柵極驅(qū)動(dòng)電源高達(dá)20V(集成了升壓功能),3.3V輸入邏輯常兼容,并集成了死區(qū)保護(hù),具有過(guò)流保護(hù)和超溫關(guān)斷輸入以及交叉導(dǎo)通保護(hù)等.IRS2336xD典型應(yīng)用包括電器馬達(dá)驅(qū)動(dòng),伺服驅(qū)動(dòng),微型逆變器驅(qū)動(dòng)和通用三相逆變器等.本文介紹了IRS2336xD主要特性,方框圖,典型應(yīng)用框圖以及IRMD2336DJ參考設(shè)計(jì)的主要特性,方
IR公司的IRS2336xD是高壓高速
功率MOSFET和IGBT柵極驅(qū)動(dòng)器,具有三個(gè)高邊和低邊參考輸出通路,能驅(qū)動(dòng)多達(dá)6個(gè)IGBT/MOSFET功率器件,每路的柵極驅(qū)動(dòng)
電源高達(dá)20V(集成了升壓功能),3.3V輸入邏輯常兼容,并集成了死區(qū)保護(hù),具有過(guò)流保護(hù)和超溫關(guān)斷輸入以及交叉導(dǎo)通保護(hù)等. IRS2336xD典型應(yīng)用包括電器馬達(dá)驅(qū)動(dòng),伺服驅(qū)動(dòng),微型
逆變器驅(qū)動(dòng)和通用三相逆變器等.本文介紹了IRS2336xD主要特性,方框圖, 典型應(yīng)用框圖以及IRMD2336DJ參考設(shè)計(jì)的主要特性,方框圖和詳細(xì)電路圖和所用材料清單(BOM).
The IRS2336xD are high voltage, high speed, power MOSFET and IGBT gate drivers with three high-side and three low-side referenced
output channels for 3-ph
ase appl
icati
ons. This IC is designed to be used with low-cost bootstrap power supplies; the bootstrap diode functionality has been integrated into this device to reduce the component count and the PCB size. Proprietary HVIC and latch im
mune CMOS technologies have been implemented in a rugged monolithic structure. The floating logic input is compatible with standard CMOS or LSTTL outputs (down to 3.3 V logic). A current trip function which terminates all six outputs can be derived from an external current sense resistor. Enable functionality is available to terminate all six outputs simultaneously.
An open-drain FAULT signal is provided to indicate that a fault (e.g., over-current, over-tem
perature, or undervoltage shutdown event) has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. Shoot-through protection circuitry and a minimum deadtime circuitry have been integrated into this IC. Propagation delays are matched to simplify the HVIC’s use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration, which operate up to 600 V.
IRS2336xD 主要特性:
• Drives up to six IGBT/MOSFET power devices
• Gate drive supplies up to 20 V per channel
• Integrated bootstrap functionality (IRS2336(4)D)
• Over-current protection
• Over-temperature shutdown input
• Advanced input filter
• Integrated deadtime protection
• Shoot-through (cross-conduction) protection
• Undervoltage lockout for VCC &
amp; VBS
