型号 | 制造商 | 描述 | 操作 |
BCR116E6327HTSA1 [更多] | Infineon Technologies AG | TRANS PREBIAS NPN 0.2W SOT23-3 RoHS: Compliant | pbFree: Yes | 搜索 查看资料 |
BCR116E6327HTSA1 [更多] | Infineon Technologies AG | TRANS PREBIAS NPN 0.2W SOT23-3 RoHS: Compliant | pbFree: Yes | 搜索 查看资料 |
BCR116E6327HTSA1 [更多] | Infineon Technologies AG | TRANS PREBIAS NPN 0.2W SOT23-3 RoHS: Compliant | pbFree: Yes | 搜索 查看资料 |
BCR116E6433HTMA1 [更多] | Infineon Technologies AG | TRANS PREBIAS NPN 200MW SOT23-3 RoHS: Compliant | pbFree: Yes | 搜索 查看资料 |
BCR116E6393HTSA1 [更多] | Infineon Technologies AG | TRANS PREBIAS NPN SOT23 RoHS: Compliant | pbFree: Yes | 搜索 查看资料 |
BCR116SH6327XTSA1 [更多] | Infineon Technologies AG | TRANS 2NPN PREBIAS 0.25W SOT363 RoHS: Compliant | pbFree: Yes | 搜索 查看资料 |
BCR116WH6327XTSA1 [更多] | Infineon Technologies AG | TRANS PREBIAS NPN 250MW SOT323-3 RoHS: Compliant | pbFree: Yes | 搜索 查看资料 |
型号 | 制造商 | 描述 | 操作 |
BCR 116W H6327 [更多] | Infineon Technologies AG | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR RoHS: Compliant | 搜索 |
BCR116E6327HTSA1 [更多] | Infineon Technologies AG | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR RoHS: Compliant | 搜索 |
BCR 116 E6327 [更多] | Infineon Technologies AG | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR RoHS: Compliant | 搜索 |
BCR 116S H6327 [更多] | Infineon Technologies AG | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR RoHS: Compliant | 搜索 |
BCR 116 E6433 [更多] | Infineon Technologies AG | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR RoHS: Compliant | 搜索 |
BCR116WH6327XTSA1 [更多] | Infineon Technologies AG | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR RoHS: Compliant | 搜索 |
BCR116SH6327XTSA1 [更多] | Infineon Technologies AG | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR RoHS: Compliant | 搜索 |
BCR116E6433HTMA1 [更多] | Infineon Technologies AG | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR RoHS: Compliant | 搜索 |
BCR 116S E6327 [更多] | Infineon Technologies AG | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR RoHS: Compliant | 搜索 |
BCR 116W E6327 [更多] | Infineon Technologies AG | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR RoHS: Compliant | 搜索 |
型号 | 制造商 | 描述 | 操作 |
BCR 116 E6327 [更多] | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R (Alt: BCR 116 E6327) RoHS: Compliant | 搜索 |
BCR116SH6327XTSA1 [更多] | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: BCR116SH6327XTSA1) RoHS: Compliant | 搜索 |
BCR 116S H6327 [更多] | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R (Alt: BCR 116S H6327) RoHS: Compliant | 搜索 |
BCR116E6433XT [更多] | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: BCR116E6433HTMA1) RoHS: Compliant | 搜索 |
BCR116E6327HTSA1 [更多] | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: BCR116E6327HTSA1) RoHS: Compliant | 搜索 |
BCR116WH6327XTSA1 [更多] | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA 3-Pin SOT-323 T/R - Tape and Reel (Alt: BCR116WH6327XTSA1) RoHS: Compliant | 搜索 |
型号 | 制造商 | 描述 | 操作 |
BCR116E6327HTSA1 [更多] | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R RoHS: Compliant | 搜索 |
BCR116SH6327XTSA1 [更多] | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R RoHS: Compliant | 搜索 |
BCR116SH6327XTSA1 [更多] | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R RoHS: Compliant | 搜索 |
BCR116SH6327XTSA1 [更多] | Infineon Technologies AG | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R RoHS: Compliant | 搜索 |
型号 | 制造商 | 描述 | 操作 |
BCR116SH6327XTSA1 [更多] | Infineon Technologies AG | BCR116 Series NPN 50 V 100 mA SMT Silicon Digital Transistor - SOT-363-6 RoHS: Compliant | pbFree: Yes | 搜索 |
型号 | 制造商 | 描述 | 操作 |
BCR116SE6327 [更多] | Infineon Technologies AG |
| 搜索 |
型号 | 制造商 | 描述 | 操作 |
BCR116 [更多] | Infineon Technologies AG | Transistor Marking: WGs Housing type: SOT-23 Pitch (space between holes on tape): 4 mm Polarity: NPN Roll diameter: 180 mm (7") Width, band: 8 mm Collector-emitter voltage: 50 V Power dissipation: 200 mW
| 搜索 查看资料 |
BCR116 [更多] | Infineon Technologies AG | Transistor Marking: WGs Housing type: SOT-23 Polarity: NPN Collector-emitter voltage: 50 V Power dissipation: 200 mW
| 搜索 查看资料 |
型号 | 制造商 | 描述 | 操作 |
BCR116SH6327 [更多] | Infineon Technologies AG | Transistor: NPN x2, bipolar, BRT, 50V, 100mA, 250mW, SOT363, R2:47kΩ
| 搜索 |
BCR116WH6327 [更多] | Infineon Technologies AG | Transistor: NPN, bipolar, BRT, 50V, 100mA, 250mW, SOT323, R1:4.7kΩ
| 搜索 |
型号 | 制造商 | 描述 | 操作 |
BCR1/16-10R5F [更多] | TT electronics / BI Technologies | CR0603-10R5F
| 搜索 |
BCR1/16-1471F [更多] | TT electronics / BI Technologies | CR0603-1471F
| 搜索 |
BCR1/16-2101F [更多] | TT electronics / BI Technologies | CR0603-2101F
| 搜索 |
BCR1/16-2740F [更多] | TT electronics / BI Technologies | CR0603-2740F
| 搜索 |
BCR1/16-5493F [更多] | TT electronics / BI Technologies | CR0603-5493F
| 搜索 |
BCR1/16-61R9FT13 [更多] | TT electronics / BI Technologies | CR0603-61R9F
| 搜索 |
BCR1/16-61R9FT13 [更多] | TT electronics / BI Technologies | CR0603-61R9F
| 搜索 |
BCR1/16-61R9FT13 [更多] | BI TECH. | CR0603-61R9F
| 搜索 |
BCR1/16-6342F [更多] | TT electronics / BI Technologies | CR0603-6342F
| 搜索 |
BCR1/16-680J [更多] | TT electronics / BI Technologies | CR0603-680J
| 搜索 |
BCR1/16-8060FT [更多] | TT electronics / BI Technologies |
| 搜索 |
BCR1/16223JT [更多] | TT electronics / BI Technologies |
| 搜索 |
BCR116W-E6327 [更多] | Infineon Technologies AG | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR (Also Known As: BCR116W)
| 搜索 |
BCR116W-E6327 [更多] | Infineon Technologies AG | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
| 搜索 |
型号 | 制造商 | 描述 | 库存 | 起订量 | 参考单价 (含税) | 货期 (工作日) | 操作 |
查看库存、价格及货期 |
典型電阻比 | 0.1 | |
典型輸入電阻器 | 4.7 kΩ | |
安裝類型 | 表面貼裝 | |
寬度 | 1.25mm | |
封裝類型 | SOT-363 | |
尺寸 | 2 x 1.25 x 0.8mm | |
引腳數(shù)目 | 6 | |
晶體管類型 | NPN | |
最大功率耗散 | 250 mW | |
最大連續(xù)集電極電流 | 100 mA | |
最大集電極-發(fā)射極電壓 | 50 V | |
最大集電極-發(fā)射極飽和電壓 | 0.3 V | |
最小直流電流增益 | 70 | |
最高工作溫度 | +150 °C | |
每片芯片元件數(shù)目 | 2 | |
配置 | 雙 | |
長度 | 2mm | |
高度 | 0.8mm |